Details

Autor(en) / Beteiligte

• Meesala, Srujan
• Sohn, Young-Ik
• Pingault, Benjamin
• Shao, Linbo
• Atikian, Haig A.
• Holzgrafe, Jeffrey
• Gündoğan, Mustafa
• Stavrakas, Camille
• Sipahigil, Alp
• Chia, Cleaven
• Evans, Ruffin
• Burek, Michael J.
• Zhang, Mian
• Wu, Lue
• Pacheco, Jose L.
• Abraham, John
• Bielejec, Edward
• Lukin, Mikhail D.
• Atatüre, Mete
• Lončar, Marko

Titel

Strain engineering of the silicon-vacancy center in diamond

Ist Teil von

• Physical review. B, 2018-05, Vol.97 (20), Article 205444

Ort / Verlag

College Park: American Physical Society

Erscheinungsjahr

2018

Quelle

American Physical Society Journals

Beschreibungen/Notizen

• We control the electronic structure of the silicon-vacancy (SiV) color-center in diamond by changing its static strain environment with a nano-electro-mechanical system. This allows deterministic and local tuning of SiV optical and spin transition frequencies over a wide range, an essential step towards multiqubit networks. In the process, we infer the strain Hamiltonian of the SiV revealing large strain susceptibilities of order 1 PHz/strain for the electronic orbital states. We identify regimes where the spin-orbit interaction results in a large strain susceptibility of order 100 THz/strain for spin transitions, and propose an experiment where the SiV spin is strongly coupled to a nanomechanical resonator.