Details

Autor(en) / Beteiligte

• Pardini, T
• Alameda, J
• Aquila, A
• Boutet, S
• Decker, T
• Gleason, A E
• Guillet, S
• Hamilton, P
• Hayes, M
• Hill, R
• Koglin, J
• Kozioziemski, B
• Robinson, J
• Sokolowski-Tinten, K
• Soufli, R
• Hau-Riege, S P

Titel

Delayed Onset of Nonthermal Melting in Single-Crystal Silicon Pumped with Hard X Rays

Ist Teil von

• Physical review letters, 2018-06, Vol.120 (26), p.265701-265701, Article 265701

Ort / Verlag

United States: American Physical Society

Erscheinungsjahr

2018

Quelle

Electronic Journals Library

Beschreibungen/Notizen

• In this work, we monitor the onset of nonthermal melting in single-crystal silicon by implementing an x-ray pump-x-ray probe scheme. Using the ultrashort pulses provided by the Linac Coherent Light Source (SLAC) and a custom-built split-and-delay line for hard x rays, we achieve the temporal resolution needed to detect the onset of the transition. Our data show no loss of long-range order up to 150±40  fs from photoabsorption, which we interpret as the time needed for the electronic system to equilibrate at or above the critical nonthermal melting temperature. Once such equilibration is reached, the loss of long-range atomic order proceeds inertially and is completed within 315±40  fs from photoabsorption.