Details

Autor(en) / Beteiligte

• Tayari, V.
• Senkovskiy, B. V.
• Rybkovskiy, D.
• Ehlen, N.
• Fedorov, A.
• Chen, C.-Y.
• Avila, J.
• Asensio, M.
• Perucchi, A.
• di Pietro, P.
• Yashina, L.
• Fakih, I.
• Hemsworth, N.
• Petrescu, M.
• Gervais, G.
• Grüneis, A.
• Szkopek, T.

Titel

Quasi-two-dimensional thermoelectricity in SnSe

Ist Teil von

• Physical review. B, 2018-01, Vol.97 (4), Article 045424

Ort / Verlag

College Park: American Physical Society

Erscheinungsjahr

2018

Quelle

APS_美国物理学会期刊

Beschreibungen/Notizen

• Stannous selenide is a layered semiconductor that is a polar analog of black phosphorus and of great interest as a thermoelectric material. Unusually, hole doped SnSe supports a large Seebeck coefficient at high conductivity, which has not been explained to date. Angle-resolved photoemission spectroscopy, optical reflection spectroscopy, and magnetotransport measurements reveal a multiple-valley valence-band structure and a quasi-two-dimensional dispersion, realizing a Hicks-Dresselhaus thermoelectric contributing to the high Seebeck coefficient at high carrier density. We further demonstrate that the hole accumulation layer in exfoliated SnSe transistors exhibits a field effect mobility of up to 250cm2/Vs at T=1.3K. SnSe is thus found to be a high-quality quasi-two-dimensional semiconductor ideal for thermoelectric applications.