Details

Autor(en) / Beteiligte

• Wan, Yating
• Zhang, Zeyu
• Chao, Ruilin
• Norman, Justin
• Jung, Daehwan
• Shang, Chen
• Li, Qiang
• Kennedy, M J
• Liang, Di
• Zhang, Chong
• Shi, Jin-Wei
• Gossard, Arthur C
• Lau, Kei May
• Bowers, John E

Titel

Monolithically integrated InAs/InGaAs quantum dot photodetectors on silicon substrates

Ist Teil von

• Optics express, 2017-10, Vol.25 (22), p.27715-27723

Ort / Verlag

United States: Optical Society of America

Erscheinungsjahr

2017

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• We report InAs/InGaAs quantum dot (QD) waveguide photodetectors (PD) monolithically grown on silicon substrates. A high-crystalline quality GaAs-on-Si template was achieved by aspect ratio trapping together with the combined effects of cyclic thermal annealing and strain-balancing layer stacks. An ultra-low dark current of 0.8 nA and an internal responsivity of 0.9 A/W were measured in the O band. We also report, to the best of our knowledge, the first characterization of high-speed performance and the first demonstration of the on-chip photodetection for this QD-on-silicon system. The monolithically integrated waveguide PD shares the same platform as the previously demonstrated micro-ring lasers and can thus be integrated with laser sources for power monitors or amplifiers for pre-amplified receivers.