Details

Autor(en) / Beteiligte

• Jariwala, Deep
• Davoyan, Artur R
• Tagliabue, Giulia
• Sherrott, Michelle C
• Wong, Joeson
• Atwater, Harry A

Titel

Near-Unity Absorption in van der Waals Semiconductors for Ultrathin Optoelectronics

Ist Teil von

• Nano letters, 2016-09, Vol.16 (9), p.5482-5487

Ort / Verlag

United States: American Chemical Society

Erscheinungsjahr

2016

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We demonstrate near-unity, broadband absorbing optoelectronic devices using sub-15 nm thick transition metal dichalcogenides (TMDCs) of molybdenum and tungsten as van der Waals semiconductor active layers. Specifically, we report that near-unity light absorption is possible in extremely thin (<15 nm) van der Waals semiconductor structures by coupling to strongly damped optical modes of semiconductor/metal heterostructures. We further fabricate Schottky junction devices using these highly absorbing heterostructures and characterize their optoelectronic performance. Our work addresses one of the key criteria to enable TMDCs as potential candidates to achieve high optoelectronic efficiency.