Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as
R
=
A
n
+
B
n
2
+
C
n
3
+
f
(
n
)
, where
f
(
n
)
represents carrier leakage out of the active region. The term
f
(
n
)
is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an
f
(
n
)
leakage contribution and an Auger contribution) is found to be
8
×
10
−
29
cm
6
s
−
1
. Comparison of the theoretical
A
B
C
+
f
(
n
)
model with experimental data shows that a good fit requires the inclusion of the
f
(
n
)
term.