Details

Autor(en) / Beteiligte

• Dai, Qi
• Shan, Qifeng
• Wang, Jing
• Chhajed, Sameer
• Cho, Jaehee
• Schubert, E. Fred
• Crawford, Mary H.
• Koleske, Daniel D.
• Kim, Min-Ho
• Park, Yongjo

Titel

Carrier recombination mechanisms and efficiency droop in GaInN/GaN light-emitting diodes

Ist Teil von

• Applied physics letters, 2010-09, Vol.97 (13), p.133507-133507-3

Ort / Verlag

United States: American Institute of Physics

Erscheinungsjahr

2010

Quelle

AIP Scitation Journals Complete

Beschreibungen/Notizen

• We model the carrier recombination mechanisms in GaInN/GaN light-emitting diodes as R = A n + B n 2 + C n 3 + f ( n ) , where f ( n ) represents carrier leakage out of the active region. The term f ( n ) is expanded into a power series and shown to have higher-than-third-order contributions to the recombination. The total third-order nonradiative coefficient (which may include an f ( n ) leakage contribution and an Auger contribution) is found to be 8 × 10 − 29   cm 6 s − 1 . Comparison of the theoretical A B C + f ( n ) model with experimental data shows that a good fit requires the inclusion of the f ( n ) term.