Details

Autor(en) / Beteiligte

• Gao, Jian
• Kim, Young Duck
• Liang, Liangbo
• Idrobo, Juan Carlos
• Chow, Phil
• Tan, Jiawei
• Li, Baichang
• Li, Lu
• Sumpter, Bobby G.
• Lu, Toh-Ming
• Meunier, Vincent
• Hone, James
• Koratkar, Nikhil

Titel

Transition-Metal Substitution Doping in Synthetic Atomically Thin Semiconductors

Ist Teil von

• Advanced materials (Weinheim), 2016-11, Vol.28 (44), p.9735-9743

Ort / Verlag

Germany: Blackwell Publishing Ltd

Erscheinungsjahr

2016

Link zum Volltext

Quelle

Wiley Online Library All Journals

Beschreibungen/Notizen

• Large‐area “in situ” transition‐metal substitution doping for chemical‐vapor‐deposited semiconducting transition‐metal‐dichalcogenide monolayers deposited on dielectric substrates is demonstrated. In this approach, the transition‐metal substitution is stable and preserves the monolayer's semiconducting nature, along with other attractive characteristics, including direct‐bandgap photoluminescence.