Details

Autor(en) / Beteiligte

• Duenow, Joel N.
• Burst, James M.
• Albin, David S.
• Reese, Matthew O.
• Jensen, Soren A.
• Johnston, Steven W.
• Kuciauskas, Darius
• Swain, Santosh K.
• Ablekim, Tursun
• Lynn, Kelvin G.
• Fahrenbruch, Alan L.
• Metzger, Wyatt K.

Titel

Relationship of Open-Circuit Voltage to CdTe Hole Concentration and Lifetime

Ist Teil von

• IEEE journal of photovoltaics, 2016-11, Vol.6 (6), p.1641-1644

Ort / Verlag

Piscataway: IEEE

Erscheinungsjahr

2016

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore

Beschreibungen/Notizen

• We investigate the correlation of bulk CdTe and CdZnTe material properties with experimental open-circuit voltage (V oc ) through fabrication and characterization of diverse single-crystal solar cells with different dopants. Several distinct crystal types reach V oc > 900 mV. Correlations are in general agreement with V oc limits modeled from bulk minority-carrier lifetime and hole concentration.