Details

Autor(en) / Beteiligte

• Du, Lingjie
• Knez, Ivan
• Sullivan, Gerard
• Du, Rui-Rui

Titel

Robust helical edge transport in gated InAs/GaSb bilayers

Ist Teil von

• Physical review letters, 2015-03, Vol.114 (9), p.096802-096802, Article 096802

Ort / Verlag

United States: American Physical Society

Erscheinungsjahr

2015

Link zum Volltext

Quelle

PROLA - Physical Review Online Archive

Beschreibungen/Notizen

• We have engineered electron-hole bilayers of inverted InAs/GaSb quantum wells, using dilute silicon impurity doping to suppress residual bulk conductance. We have observed robust helical edge states with wide conductance plateaus precisely quantized to 2e^{2}/h in mesoscopic Hall samples. On the other hand, in larger samples the edge conductance is found to be inversely proportional to the edge length. These characteristics persist in a wide temperature range and show essentially no temperature dependence. The quantized plateaus persist to a 12 T applied in-plane field; the conductance increases from 2e^{2}/h in strong perpendicular fields manifesting chiral edge transport. Our study presents a compelling case for exotic properties of a one-dimensional helical liquid on the edge of InAs/GaSb bilayers.