Details

Autor(en) / Beteiligte

• Zhu, Di
• Noemaun, Ahmed N.
• Schubert, Martin F.
• Cho, Jaehee
• Schubert, E. Fred
• Crawford, Mary H.
• Koleske, Daniel D.

Titel

Enhanced electron capture and symmetrized carrier distribution in GaInN light-emitting diodes having tailored barrier doping

Ist Teil von

• Applied physics letters, 2010-03, Vol.96 (12), p.121110-121110-3

Ort / Verlag

United States: American Institute of Physics

Erscheinungsjahr

2010

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The confinement of electrons to the active region of GaInN light-emitting diodes (LEDs) is limited by the (i) inefficient electron capture into polar quantum wells, (ii) electron-attracting properties of electron-blocking layers (EBL), (iii) asymmetry in electron and hole transport, and (iv) unfavorable p-doping in the EBL for high Al content. To counteract these mechanisms, we employ tailored Si-doping in the quantum barriers (QBs). Experiments show a 37.5% enhancement in light-output power at high currents of one-QB-doped LEDs over all-QB-doped LEDs. These results are consistent with simulations showing that QB doping can be used to symmetrize the electron and hole distribution.