Details

Autor(en) / Beteiligte

• Narang, Rakhi
• Saxena, Manoj
• Gupta, R.S.
• Gupta, Mridula

Titel

Assessment of Ambipolar Behavior of a Tunnel FET and Influence of Structural Modifications

Ist Teil von

• JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, 2012, 12(4), 48, pp.482-491

Ort / Verlag

대한전자공학회

Erscheinungsjahr

2012

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• In the present work, comprehensive investigation of the ambipolar characteristics of two silicon (Si) tunnel field-effect transistor (TFET)architectures (i.e. p-i-n and p-n-p-n) has been carried out. The impact of architectural modifications such as heterogeneous gate (HG) dielectric, gate drain underlap (GDU) and asymmetric source/drain doping on the ambipolar behavior is quantified in terms of physical parameters proposed for ambipolarity characterization. Moreover, the impact on the miller capacitance is also taken into consideration since ambipolarity is directly related to reliable logic circuit operation and miller capacitance is related to circuit performance. KCI Citation Count: 64