Details

Autor(en) / Beteiligte

• Cho, Dongkyu
• Woo, Sanghyun
• Yang, Jungil
• Lee, Donghee
• Lim, Yoosung
• Kim, Daekuk
• Park, Sungmin
• Yi, Moonsuk

Titel

High performance thin film transistor with HfSiOx dielectric fabricated at room temperature RF-magnetron sputtering

Ist Teil von

• Electronic Materials Letters, 2013, 9(4), , pp.381-384

Ort / Verlag

Dordrecht: Springer Netherlands

Erscheinungsjahr

2013

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In this work, we investigated the enhanced performance of IZO-based TFTs with HfSiO x gate insulators. Four types of HfSiO x gate insulators with different deposition powers were deposited by co-sputtering HfO 2 and Si. To simplify the processing sequences, all of the layers of the TFTs were deposited by an RF-magnetron sputtering method using patterned shadow-masks without any intentional heating of the substrate or subsequent thermal annealing. The four different HfSiO x structural properties were investigated by x-ray Diffraction (XRD), Atomic Force Microscopy (AFM), and the electrical characteristics were also analyzed. There were some noticeable differences depending on the composition of the HfO 2 and Si combination. The TFT based on the HfSiO x gate insulator comprised of HfO 2 (100 W)-Si (100 W) showed the best results with a field effect mobility of 2.0 cm 2 /V·s, a threshold voltage of 0.6 V, an I on/off ratio of 3.18 × 10 5 , and an insulator surface roughness of 0.16 nm RMS. This confirms that the composition of the HfO 2 and Si is an important factor in an HfSiO x insulator. In addition, the effective bonding of the HfO 2 and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.