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In this work, we investigated the enhanced performance of IZO-based TFTs with HfSiO
x
gate insulators. Four types of HfSiO
x
gate insulators with different deposition powers were deposited by co-sputtering HfO
2
and Si. To simplify the processing sequences, all of the layers of the TFTs were deposited by an RF-magnetron sputtering method using patterned shadow-masks without any intentional heating of the substrate or subsequent thermal annealing. The four different HfSiO
x
structural properties were investigated by x-ray Diffraction (XRD), Atomic Force Microscopy (AFM), and the electrical characteristics were also analyzed. There were some noticeable differences depending on the composition of the HfO
2
and Si combination. The TFT based on the HfSiO
x
gate insulator comprised of HfO
2
(100 W)-Si (100 W) showed the best results with a field effect mobility of 2.0 cm
2
/V·s, a threshold voltage of 0.6 V, an
I
on/off
ratio of 3.18 × 10
5
, and an insulator surface roughness of 0.16 nm RMS. This confirms that the composition of the HfO
2
and Si is an important factor in an HfSiO
x
insulator. In addition, the effective bonding of the HfO
2
and Si reduced the defects in the insulator bulk and also improved the interface quality between the channel and the gate insulator.