Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
Study of TIPS-pentacene diode using electrical and electric field induced optical second harmonic generation measurement coupled with IeV and CeV measurements
Ist Teil von
Current Applied Physics, 2016, 16(10), , pp.1259-1262
Ort / Verlag
한국물리학회
Erscheinungsjahr
2016
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
By using the time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurement system, we studied the current-voltage (IeV) and capacitance-voltage (CeV) characteristics of metal-insulator-organic semiconductor diodes with a structure of indium tin oxide/Polyimide( PI)/6,13-Bis(triisopropylsilylethynyl)-pentacene(TIPS-pentacene)/Au. The TR- EFISHG directly probed the electric field across the TIPS-pentacene layer, and showed evidence of the charge accumulation at the TIPS-pentacene/PI interface region. Results of TR-EFISHG coupled with the IeV and CeV electrical measurements clearly demonstrated the rectifying properties and the threshold voltage shift of the diodes, before and after stress biasing. The results showed that the TR-EFISHG measurement coupled with the IeV and CeV measurements is a very useful way to analyze carrier behaviors and trapping charges of organic semiconductor diodes, even when the electrical property of the organic semiconductor layer is unknown. KCI Citation Count: 0