Details

Autor(en) / Beteiligte

• Do Young Kim
• Hans S. Cho
• 권장연
• Ji Sim Jung
• Kyung Bae Park
• 다까시노구찌

Titel

Effect of Thermal Annealing on Sputtered a-Si Film

Ist Teil von

• Journal of the Korean Physical Society, 2004, 45(3), , pp.847-850

Ort / Verlag

한국물리학회

Erscheinungsjahr

2004

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• We studied amorphous silicon (a-Si) lm deposited by sputtering as a precursor material for laser crystallization. By using radio frequency (r.f.) sputtering, a-Si lm was deposited at room temperature. The a-Si lm was crystallized by using an ultraviolet (UV) pulsed excimer laser. It was found that the a-Si lm was delaminated, even at low laser energy densities below the energy density at which lateral grain growth could occur. However, when annealed for 1 hr at 500 C after deposition, the a-Si lm endured without delamination up to and beyond the laser energy density at which lateral grain growth could occur. The grain size of the poly-Si lm obtained by excimer laser annealing (ELA) after annealing the a-Si precursor lm at 500 C was as large as 300 nm. We conclude that the 500 C thermal annealing prevents the delamination during laser irradiation due to a reduction of intrinsic stress as a result of densication of the lm. KCI Citation Count: 16