Details

Autor(en) / Beteiligte

• J. W. KWON
• C. S. CHO
• H. J. WOO
• 이종현
• K. OSHIMA
• K. W. KWON
• 소린 크리스토르베뉴
• Y.H. BAE

Titel

Characteristics of SOI Structure with Buried Alumina Layer

Ist Teil von

• Journal of the Korean Physical Society, 2004, 45(3), , pp.693-696

Ort / Verlag

한국물리학회

Erscheinungsjahr

2004

Quelle

EZB Free E-Journals

Beschreibungen/Notizen

• A SOI (Silicon On Insulator) structure with buried alumina was fabricated by ALD (Atomic Layer Deposition) followed by bonding and etchback process. The interface of alumina and silicon was analyzed by CV measurements and the cross section was investigated by SEM (Scanning Electron Microscope) analysis. The density of interface state of alumina and silicon was 2.5 1011 cmက2eVက1 after high temperature annealing for wafer bonding. It was conrmed that the surface silicon layer was completely isolated from the substrate by cross section SEM and AES (Auger Electron Spectroscope) depth prole. Moreover, XRD (X-ray Diraction) analysis was carried out to study the crystallization of the alumina layer before and after high temperature annealing. The alumina lm is slightly crystallized after annealing. The simulated results conrmed that the lattice temperature of MOSFET on SOI with buried alumina was lower than that of SOI with buried silicon dioxide. A device on this alumina SOI structure would have better thermal properties than one on conventional SOI, due to higher thermal conductivity of alumina than that of silicon dioxide. KCI Citation Count: 2