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Residual Stress and Optical Properties in a Post-Annealed Ta2O5/SiO2 Multilayer Prepared by Using Dual-Ion-Beam Sputtering
Ist Teil von
Journal of the Korean Physical Society, 2006, 49(1), , pp.237-240
Ort / Verlag
한국물리학회
Erscheinungsjahr
2006
Link zum Volltext
Quelle
EZB Electronic Journals Library
Beschreibungen/Notizen
The residual stress and optical properties of Ta2O5(H)/SiO2(L) single and multilayers were examined
as functions of the annealing temperature (200 400 C) using dual ion beam sputtering
(DIBS). The residual stress of the annealed SiO2, Ta2O5 single layer was released, and all were
found to be in compressive stress when the annealing temperature ranged from 200 to 300 C. The
residual stress of the as-deposited (HL) multilayer film increased as the number of layers increased.
The residual stress of the (HL)3 and the (HL)4 films was released as the annealing temperature was
increased. The transmittance wavelength of the (HL)4 layer shifted to a longer wavelength as the
temperature was increased and the rms roughness increased. KCI Citation Count: 4