Details

Autor(en) / Beteiligte

• 문주호
• 김동주
• 정선호
• Jooho Moon
• Chiyoung Park
• Minhyon Jeon
• Won-Chol Sin
• Jinha Jung
• Hyun-Jung Woo
• Seung-Hyun Kim
• Jowoong Ha

Titel

Sol-Gel derived Ga-In-Zn-O Semiconductor Layers for Solution-Processed Thin-Film Transistors

Ist Teil von

• Journal of the Korean Physical Society, 2008, 53(1), , pp.218-222

Ort / Verlag

한국물리학회

Erscheinungsjahr

2008

Quelle

EZB-FREE-00999 freely available EZB journals

Beschreibungen/Notizen

• We have prepared a solution processed oxide semiconductor layer for thin-film transistors. The oxide semiconductor thin-film were prepared by spin coating a sol-gel precursor solution based on Ga and In-co-doped ZnO (GIZO). The sol-gel-derived GIZO film were uniform and have smooth surface morphology (rms. roughness ~0.7 nm). The device performance of the solution-processed thin-flm transistors was analyzed as a function of the doping concentration and the annealing temperature. The transistors annealed at 450 ℃ showed clear switching behavior and output characteristic with relatively high field effect mobility (~0.1 ㎠/V·s) and low threshold voltage (~5.4 V). Even when annealed at 300 ℃, they showed reasonable field effect mobility (~0.03 cm2/Vs) and a lower threshold voltage (~-0.2 V). Our findings demonstrate the feasibility of using sol-gel-based oxide semiconductor transistors for successful application to cost-effective and mass-producible display and optoelectronic devices with enhanced device performance. KCI Citation Count: 17