Details

Autor(en) / Beteiligte

• 김택성
• 김형구
• 이형재
• J. Y. Park
• T. V. Cuong
• 홍창희
• 서은경

Titel

Effect of Annealing on InGaN/GaN Multiple Quantum Wells

Ist Teil von

• Journal of the Korean Physical Society, 2005, 47(3), , pp.871-875

Ort / Verlag

한국물리학회

Erscheinungsjahr

2005

Link zum Volltext

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• The effect of annealing on InGaN/GaN multiple quantum wells (MQW) grown by using metalorganic chemical vapor deposition is studied. The samples were annealed at 900C for 10, 20, 30, 40,and 50 min, in a furnace with a N2 atmosphere. The variation of the period in the quantum well with increasing annealing time was observed by analyzing the satellite peaks in the high-resolution X-ray diffraction pattern. Also, the photocurrent and the photoluminescence spectral peaks were red-shifted and blue-shifted, respectively, annealing time. The red-shift is attributed to a decrease in the quantized energies due to a reduction in the inhomogeneity of the indium content in the QW. The blue-shift can be understood as being due to on increase in the quantized energies for the ground state due to the interdiffusion of In and Ga atoms across the barrier/QW interface, which leads to a change in the potential profile of the conduction and the valence bands. The effect of annealing on InGaN/GaN multiple quantum wells (MQW) grown by using metalorganic chemical vapor deposition is studied. The samples were annealed at 900C for 10, 20, 30, 40,and 50 min, in a furnace with a N2 atmosphere. The variation of the period in the quantum well with increasing annealing time was observed by analyzing the satellite peaks in the high-resolution X-ray diffraction pattern. Also, the photocurrent and the photoluminescence spectral peaks werered-shifted and blue-shifted, respectively, annealing time. The red-shift is attributed to a decrease in the quantized energies due to a reduction in the inhomogeneity of the indium content in the QW. The blue-shift can be understood as being due to on increase in the quantized energies for the ground state due to the interdiffusion of In and Ga atoms across the barrier/QW interface, which leads to a change in the potential profile of the conduction and the valence bands. KCI Citation Count: 7