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Analysis of heteroepitaxial germanium on gallium arsenide grown by pulsed laser deposition
Ist Teil von
Current Applied Physics, 2004, 4(2-4), , pp.229-232
Ort / Verlag
한국물리학회
Erscheinungsjahr
2004
Link zum Volltext
Quelle
Access via ScienceDirect (Elsevier)
Beschreibungen/Notizen
Interest in the pulsed laser deposition (PLD) technique now extends far beyond growth of multiple component oxides, the area inwhich it rst proved itself. In particular, it shows promise as a viable technique for high-quality crystalline thin lms on substrates with low thermal tolerance. In this paper, we report the PLD growth of single-crystal Ge on (10) GaAs substrates in the tem-perature range of 150550.C. In situ reection high-energy electron diraction shows the formation of a reconstructed surface afteras few as two laser pulses, corresponding to approximately 4% monolayer coverage. Transmission electron microscopy conrms heteroepitaxial growth with good quality interfaces and smooth surfaces, despite the presence of oxygen and carbon impurities. KCI Citation Count: 1