Details

Autor(en) / Beteiligte

• Sun, Seho
• Lee, Kangchun
• Lee, Ganggyu
• Kim, Yehwan
• Kim, Sungmin
• Hwang, Junha
• Kong, Hyungoo
• Chung, Kyung Yoon
• Ali, Ghulam
• Song, Taeseup
• Paik, Ungyu

Titel

Fe-substituted silica via lattice dissolution–reprecipitation replacement for tungsten chemical mechanical planarization

Ist Teil von

• Journal of Industrial and Engineering Chemistry, 2022, 111(0), , pp.219-225

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2022

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Chemical mechanical planarization (CMP) is indispensable for processing of integrated circuit semiconductor devices to attain globally planarized surfaces. One of the critical consumables in the CMP process is a slurry containing abrasives like colloidal silica (SiO2). However, there is a limit to the use of CMP slurries containing SiO2 under acidic conditions due to deterioration of colloidal stability, resulting in defects on the planarized surfaces. Herein, we developed an Fe-substituted SiO2 consisting of single-atom Fe(III), enabling improved colloidal stability over universal pH regions for low-defect tungsten CMP applications. The facile and unique single-atom modification process is proposed by controlling the lattice dissolution–reprecipitation replacement of Fe3+ and Si4+ ions. The physicochemical states of Fe atoms in the surficial lattice of Fe-substituted SiO2 were confirmed through Raman spectroscopy, electron microscopy, x-ray absorption spectroscopy, and energy-dispersive x-ray spectroscopy. Consequently, enhanced performance in W CMP was achieved using Fe-substituted SiO2. Regarding defect performance, defects were reduced from 11 scratches to 0 and 94 other defects to only 7. Additionally, the removal rate increased from 67 to 122 Å/min, and the surface topography improved from 6.6 to 2.9 nm.