Details

Autor(en) / Beteiligte

• Li, Meng
• Shin, Geon-Ho
• Lee, Hi-Deok
• Jun, Dong-Hwan
• Oh, Jungwoo

Titel

Reduction of Contact Resistance Between Ni-InGaAs Alloy and In 0.53 Ga 0.47 As Using Te Interlayer

Ist Teil von

• Transactions on electrical and electronic materials, 2017-10, Vol.18 (5), p.253-256

Ort / Verlag

한국전기전자재료학회

Erscheinungsjahr

2017

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• A thin Te interlayer was applied to a Ni/n-InGaAs contact to reduce the contact resistance between Ni-InGaAs and n-InGaAs. A 5-nm-thick Te layer was first deposited on a Si-doped n-type In 0.53 Ga 0.47 As layer, followed by in situ deposition of a 30-nmthick Ni film. After the formation of the Ni-InGaAs alloy by rapid thermal annealing at 300°C for 30 s, the extracted specific contact resistivity (ρ c ) reduced by more than one order of magnitude from 2.86 × 10 -4 Ω·cm 2 to 8.98 × 10 -6 Ω·cm 2 than that of the reference sample. A thinner Ni-InGaAs alloy layer with a better morphology was obtained by the introduction of the Te layer. The improved interface morphology and the graded Ni-InGaAs layer formed at the interface were believed to be responsible for ρ c reduction.