Details

Autor(en) / Beteiligte

• Heo, Jin-Hee

Titel

Characterization of Photoinduced Current in Poly-Si Solar Cell by Employing Photoconductive Atomic Force Microscopy (PC-AFM)

Ist Teil von

• Transactions on electrical and electronic materials, 2012-02, Vol.13 (1), p.35-38

Ort / Verlag

한국전기전자재료학회

Erscheinungsjahr

2012

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• In this study, we have attempted to characterize the photovoltaic effect in real-time measurement of photoinduced current in a poly-Si-based solar cell using photoconductive atomic force microscopy (PC-AFM). However, the high contact resistance that originates from the metal-semiconductor Schottky contact disturbs the current flow and makes it difficult to measure the photoinduced current. To solve this problem, a thin metallic film has been coated on the surface of the device, which successfully decreases the contact resistance. In the PC-AFM analysis, we used a metal-coated conducting cantilever tip as the top electrode of the solar cell and light from a halogen lamp was irradiated on the PC-AFM scanning region. As the light intensity becomes stronger, the current value increases up to 200 μA at 80 W, as more electrons and hole carriers are generated because of the photovoltaic effect. The ratio of the conducting area at different conditions was calculated, and it showed a behavior similar to that generated by a photoinduced current. On analyzing the PC-AFM measurement results, we have verified the correlation between the light intensity and photoinduced current of the poly-Si-based solar cell in nanometer scale.