Details

Autor(en) / Beteiligte

• Chung, Don W.
• Inada, M.
• Kroemer, H.

Titel

Defects in GaP film grown on Si(211) by molecular beam epitaxy

Ist Teil von

• Journal of materials research, 2016-06, Vol.1 (6), p.803-810

Ort / Verlag

New York, USA: Cambridge University Press

Erscheinungsjahr

2016

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Galium phosphorus films grown on (211 )Si by molecular beam epitaxy have been investigated using a transmission electron microscope. The main defects observed in the alloy were of misfit dislocations, stacking faults, and microtwins. The misfit dislocations are of the 60° type with Burgers vectors of a/2 ‹110›, and the stacking faults are intrinsic in nature and bounded by Shockley partials and stair-rod partial dislocations. The habit planes of these defect structures were found to depend solely on the crystalline growth orientation with respect to the substrate orientation. A possible mechanism of the formation and growth of these misfit defects has been proposed for the present growth orientation.