Details

Autor(en) / Beteiligte

• Lieb, S.
• MacCrone, R. K.
• Theimer, J.
• Maby, E. W.

Titel

Thermogravimetric analysis of the oxidation-inhibiting behavior of nitrogen-implanted silicon

Ist Teil von

• Journal of materials research, 2016-06, Vol.1 (6), p.791-796

Ort / Verlag

New York, USA: Cambridge University Press

Erscheinungsjahr

2016

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The effectiveness of oxidation-inhibiting nitride layers formed in silicon by ion implantation has been studied by in situ thermogravimetric analysis. The oxidation time delay and the oxidation rate after nitride breakdown were measured for various fluences of implanted nitrogen. The results generally confirm previous findings for the oxidation delay; however, a detailed analysis indicates that the onset of oxidation is not as abrupt as had been previously assumed. After the delay period, the oxidation of an implanted Si/SiO2 structure follows a linear time dependence at oxide thicknesses where unimplanted Si/SiO2 structures follow a parabolic dependence.