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Heterojunction DDR THz IMPATT diodes based on AlxGa1−xN/GaN material system
Ist Teil von
Journal of semiconductors, 2015-06, Vol.36 (6)
Ort / Verlag
Chinese Institute of Electronics
Erscheinungsjahr
2015
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Simulation studies are made on the large-signal RF performance and avalanche noise properties of heterojunction double-drift region (DDR) impact avalanche transit time (IMPATT) diodes based on AlxGa1−xN/GaN material system designed to operate at 1.0 THz frequency. Two different heterojunction DDR structures such as n-Al0.4Ga0.6N/p-GaN and n-GaN/p-Al0.4Ga0.6N are proposed in this study. The large-signal output power, conversion efficiency and noise properties of the heterojunction DDR IMPATTs are compared with homojunction DDR IMPATT devices based on GaN and Al0.4Ga0.6N. The results show that the n-Al0.4Ga0.6N/p-GaN heterojunction DDR device not only surpasses the n-GaN/p-Al0.4Ga0.6N DDR device but also homojunction DDR IMPATTs based on GaN and Al0.4Ga0.6N as regards large-signal conversion efficiency, power output and avalanche noise performance at 1.0 THz.