Details

Autor(en) / Beteiligte

• Fotev, Ivan
• Balaghi, Leila
• Schmidt, Johannes
• Schneider, Harald
• Helm, Manfred
• Dimakis, Emmanouil
• Pashkin, Alexej

Titel

Electron dynamics in InxGa1−xAs shells around GaAs nanowires probed by terahertz spectroscopy

Ist Teil von

• Nanotechnology, 2019-03, Vol.30 (24)

Ort / Verlag

IOP Publishing

Erscheinungsjahr

2019

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We present the electrical properties of GaAs/InxGa1−xAs core/shell nanowires (NWs) measured by ultrafast optical pump−terahertz probe spectroscopy. This contactless technique was used to measure the photoconductivity of NWs with shell compositions of x = 0.20, 0.30 and 0.44. The results were fitted with the model of localized surface plasmon in a cylinder in order to obtain electron mobilities, concentrations and lifetimes in the InxGa1−xAs NW shells. The estimated lifetimes are about 80-100 ps and the electron mobility reaches 3700 cm2 V−1 s−1 at room temperature. This makes GaAs/InGaAs NWs good candidates for the realization of high-electron-mobility transistors, which can also be monolithically integrated in Si-CMOS circuits.