Details

Autor(en) / Beteiligte

• Berencén, Y
• Prucnal, S
• Möller, W
• Hübner, R
• Rebohle, L
• Schönherr, T
• Khan, M Bilal
• Wang, M
• Glaser, M
• Georgiev, Y M
• Erbe, A
• Lugstein, A
• Helm, M
• Zhou, S

Titel

Formation of n- and p-type regions in individual Si/SiO2 core/shell nanowires by ion beam doping

Ist Teil von

• Nanotechnology, 2018-11, Vol.29 (47), p.474001-474001

Ort / Verlag

IOP Publishing

Erscheinungsjahr

2018

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A method for cross-sectional doping of individual Si/SiO2 core/shell nanowires (NWs) is presented. P and B atoms are laterally implanted at different depths in the Si core. The healing of the implantation-related damage together with the electrical activation of the dopants takes place via solid phase epitaxy driven by millisecond-range flash lamp annealing. Electrical measurements through a bevel formed along the NW enabled us to demonstrate the concurrent formation of n- and p-type regions in individual Si/SiO2 core/shell NWs. These results might pave the way for ion beam doping of nanostructured semiconductors produced by using either top-down or bottom-up approaches.