Details

Autor(en) / Beteiligte

• Huang, Kang
• Meng, Yifan
• Xu, XiaoFeng
• Chen, Pingping
• Lu, Aijiang
• Li, Hui
• Wu, Binhe
• Wang, Chunrui
• Chen, Xiaoshuang

Titel

Orbital electronic occupation effect on metal-insulator transition in TixV1−xO2

Ist Teil von

• Journal of physics. Condensed matter, 2017-08, Vol.29 (35)

Ort / Verlag

IOP Publishing

Erscheinungsjahr

2017

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A series of TixV1−xO2 (0%     x     4.48%) thin films on c-plane sapphire substrates have been fabricated by co-sputtering oxidation solutions, and the metal-insulator transition temperature (TMIT) of TixV1−xO2 films rises monotonically at the rate of 1.64 K/at.% Ti. The x-ray diffraction measurement results show that, after Ti4+ ion doping, the rutile structure expands along the cr axis while shrinking along the ar and br axis simultaneously. It makes the V-O bond length shorter, which is believed to upshift the π* orbitals. The rising of π* orbitals in Ti-doped VO2 has been illustrated by ultraviolet-infrared spectroscopy and first-principles calculation. With the Ti4+ ion doping concentration increasing, the energy levels of π* orbitals are elevated and the electronic occupation of π* orbitals decreases, which weakens the shielding for the strong electron-electron correlations in the d|| orbital and result in the TMIT rising. The research reveals that the TMIT of VO2 can be effected by the electronic occupancy of π* orbitals in a rutile state, which is helpful for developing VO2-based thermal devices.