Details

Autor(en) / Beteiligte

• Polyakov, A Y
• Smirnov, N B
• Shchemerov, I V
• Vasilev, A A
• Yakimov, E B
• Chernykh, A V
• Kochkova, A I
• Lagov, P B
• Pavlov, Yu S
• Kukharchuk, O F
• Suvorov, A A
• Garanin, N S
• Lee, In-Hwan
• Xian, Minghan
• Ren, Fan
• Pearton, S J

Titel

Pulsed fast reactor neutron irradiation effects in Si doped n-type β-Ga2O3

Ist Teil von

• Journal of physics. D, Applied physics, 2020-07, Vol.53 (27)

Ort / Verlag

IOP Publishing

Erscheinungsjahr

2020

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The effects of pulsed neutron irradiation on Si doped n-type β-Ga2O3 films grown by halide vapor phase epitaxy (HVPE) on bulk Sn doped n+ β-Ga2O3 substrates are reported. This irradiation leads to an almost linear increase with neutron fluence of the density of deep electron traps E2* (Ec − 0.74 eV), E3 (Ec − 1.05 eV), and E4 (Ec − 1.2 eV), with an introduction rate close to 0.4-0.6 cm−1 while the density of the E2 traps (Ec − 0.8 eV) related to Fe was virtually unchanged. In addition, the increase in the density of deep traps with optical ionization threshold of 1.3 eV, 2.3 eV, and 3.1 eV with an introduction rate close to 0.8-2 cm−1 was observed. The carrier removal rate under our conditions was 28 cm−1. Neutron irradiation also led to a measurable decrease of the diffusion length of nonequilibrium charge carriers. The results are qualitatively similar to previous reports for proton and α-particle irradiation of HVPE β-Ga2O3. When comparing the findings with those described earlier for bulk neutron irradiated Ga2O3, we observe lower starting densities of electron and hole traps and lower introduction rates for these traps in the epitaxial structures. The carrier removal rates were comparable to those in bulk crystals.