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Transport properties of metal-semiconductor junctions on n-type InP prepared by electrophoretic deposition of Pt nanoparticles
Ist Teil von
Semiconductor science and technology, 2014-04, Vol.29 (4), p.45017
Ort / Verlag
IOP Publishing
Erscheinungsjahr
2014
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Electrical properties of highly rectifying Pt InP junctions fabricated by electrophoretic deposition of Pt nanoparticles are investigated at different temperatures by the measurement of current-voltage and capacitance-voltage characteristics. The forward I-V characteristics of the junction are described by thermionic emissions theory at low forward bias (3kT q < V < 0.2 V) and by tunnelling current transport through the narrowed space charge region at forward bias V > 0.2 V. The reverse I-V characteristics are analysed in the scope of the thermionic emission model in the presence of shunt resistance. Electrical characteristics of these diodes are sensitive to gas mixtures with a low hydrogen concentration and show an extremely fast response and recovery time.