Details

Autor(en) / Beteiligte

• Zhao, De-Sheng
• Liu, Ran
• Fu, Kai
• Yu, Guo-Hao
• Cai, Yong
• Huang, Hong-Juan
• Wang, Yi-Qun
• Sun, Run-Guang
• Zhang, Bao-Shun

Titel

An Al0.25 Ga0.75N/GaN Lateral Field Emission Device with a Nano Void Channel Supported by the Natural Science Foundation of Jiangsu Province under Grant No BK20160400, and the Science and Technology Project of Suzhou under Grant No SZS201508

Ist Teil von

• Chinese physics letters, 2018-03, Vol.35 (3)

Ort / Verlag

Chinese Physical Society and IOP Publishing Ltd

Erscheinungsjahr

2018

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We report an Al0.25Ga0.75N/GaN based lateral field emission device with a nanometer scale void channel. A ∼45 nm void channel is obtained by etching out the SiO2 sacrificial dielectric layer between the semiconductor emitter and the metal collector. Under an atmospheric environment instead of vacuum conditions, the GaN-based field emission device shows a low turn-on voltage of 2.3 V, a high emission current of ∼40 μA (line current density 2.3 mA/cm) at a collector bias VC = 3 V, and a low reverse leakage of 3 nA at VC = −3 V. These characteristics are attributed to the nanometer scale void channel as well as the high density of two-dimensional electron gas in the AlGaN/GaN heterojunction. This type of device may have potential applications in high frequency microelectronics or nanoelectronics.