Details

Autor(en) / Beteiligte

• Chikoidze, E
• Boshta, M
• Gomaa, M
• Tchelidze, T
• Daraselia, D
• Japaridze, D
• Shengelaya, A
• Dumont, Y
• Neumann-Spallart, M

Titel

Control of p-type conduction in Mg doped monophase CuCrO2 thin layers

Ist Teil von

• Journal of physics. D, Applied physics, 2016-04, Vol.49 (20)

Ort / Verlag

IOP Publishing

Erscheinungsjahr

2016

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• This work aims to clarify the origin of hole conduction in undoped and Mg-doped CuCrO2 oxide in order to have the possibility of controlling it by corresponding growth parameters. A chemical spray pyrolysis procedure for the deposition of p-type semiconductor thin films is described. The as-deposited films were amorphous. The formation of highly crystalline CuCrO2 and Mg-doped CuCrO2 films with a single phase delafossite structure was realized by annealing between 600 °C and 960 °C in a nitrogen atmosphere. The carrier concentration and the point defects of the samples are calculated by using the developed Kroger method of quasi-chemical reactions. p-type conductivity was predicted and observed in the undoped and Mg doped CuCrO2 sample, and with n ~ 1018 cm−3 carrier concentrations for 4%Mg doping. The electrical resistivity for a 4% Mg doped sample was 1.4 Ω·cm with a Seebeck coefficient of  +130 μV K−1 at 40 °C. By electroparamagnetic resonance spectroscopy Cr3+ and Cu2+ related defects were studied.