Details

Autor(en) / Beteiligte

• Åkerman, Johan

Titel

Magnetoresistive Random Access Memory

Ist Teil von

• Spintronics Handbook: Spin Transport and Magnetism, Second Edition, 2019, Vol.3, p.421-442

Auflage

2

Ort / Verlag

CRC Press

Erscheinungsjahr

2019

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• This chapter focuses on the toggle magnetic random access memory (MRAM), developed by Motorola, Freescale Semiconductor, and Everspin Technologies. Toggle MRAM has been followed by spin transfer torque MRAM (STT-MRAM), which offers much higher storage density and greater scalability. The chapter discusses the potential and challenges of STT-MRAM. MRAM combines a set of properties not simultaneously available in any other memory technology: non-volatility, low-voltage operation, unlimited read and write endurance, high-speed read and write operation, excellent reliability, and radiation hardness. The chapter describes the fundamental properties governing single bit operation, the additional challenges of full array operation, the long-term reliability of MRAM, and the emerging MRAM applications. The dominating advantage of toggle MRAM is its greatly enhanced selectivity. In MRAM, reliability can be divided into well-known complementary metal-oxide-semiconductor reliability issues and new failure mechanisms related to the MRAM module itself.