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In order to decrease the effect of an interface dead layer, we improved PZT thin film properties that have highly preferential (111) orientation [R(111) = 88%] and good electrical results [71 μC/cm
2
] with optimized N2 and O2 gas treatment prior to PTO and PZT deposition.
From XPS result shows that creating a homogeneously crystal structure is the main key of high performance ferroelectric thin film technology.
In addition, PZT capacitor device with N2 and O2 pre-deposition gas treatment have 90% non-volatile charge.