Details

Autor(en) / Beteiligte

• Van Tonder, B. J. E.
• Gaigher, H. L.
• Friedland, E.

Titel

Transmission electron microscopy of InSb following alpha particle irradiation

Ist Teil von

• Radiation effects and defects in solids, 1989-05, Vol.108 (1), p.53-59

Ort / Verlag

Taylor & Francis Group

Erscheinungsjahr

1989

Quelle

Taylor & Francis Current Content Access

Beschreibungen/Notizen

• Radiation damage in InSb as a result of the implantation of helium ions, has been investigated. The results of transmission electron microscopic investigations of InSb samples implanted at different temperatures are presented. The observed radiation damage varied from a slight increase in the dislocation density as a result of heated implantations, to the total loss of crystallinity after implantation at 77 K. The nature of the dislocation loops which form due to room temperature implantation, was determined. The relation between the TEM observations and RBS/channeling results, as well as the development of radiation damage in InSb due to light ion irradiation, are also discussed.