Details

Autor(en) / Beteiligte

• Costantini, Jean-Marc

Titel

Disorder induced in silicon carbide by heavy-ion irradiation

Ist Teil von

• Philosophical magazine letters, 2021-05, Vol.101 (5), p.185-191

Ort / Verlag

Abingdon: Taylor & Francis

Erscheinungsjahr

2021

Quelle

Taylor & Francis

Beschreibungen/Notizen

• The decrease of crystal phonon peak intensities in Raman spectra of silicon carbide after heavy-ion irradiation is analysed in relation to band-gap shrinkage and Urbach edge slope increase arising from accumulation of lattice disorder. The discrepancy on amorphous fractions deduced from Raman spectroscopy and Rutherford backscattering-channelling spectroscopy is addressed by taking into account point-defect formation and amorphization by displacement damage. A new analysis of Raman data is provided on the basis of self-absorption of scattered light associated with damage build-up.