Details

Autor(en) / Beteiligte

• Armstrong, A.M
• Allerman, A.A
• Fischer, A.J
• King, M.P
• van Heukelom, M.S
• Moseley, M.W
• Kaplar, R.J
• Wierer, J.J
• Crawford, M.H
• Dickerson, J.R

Titel

High voltage and high current density vertical GaN power diodes

Ist Teil von

• Electronics letters, 2016-06, Vol.52 (13), p.1170-1171

Ort / Verlag

United States: The Institution of Engineering and Technology

Erscheinungsjahr

2016

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• The realisation of a GaN high voltage vertical p–n diode operating at >3.9 kV breakdown with a specific on-resistance <0.9 mΩ cm2 is reported. Diodes achieved a forward current of 1 A for on-wafer, DC measurements, corresponding to a current density >1.4 kA/cm2. An effective critical electric field of 3.9 MV/cm was estimated for the devices from analysis of the forward and reverse current–voltage characteristics. This suggests that the fundamental limit to the GaN critical electric field is significantly greater than previously believed.