Electronics letters, 2015-08, Vol.51 (17), p.1366-1368
2015
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- Autor(en) / Beteiligte
- Titel
- High fT and fMAX for 100 nm unpassivated rectangular gate AlGaN/GaN HEMT on high resistive silicon (111) substrate
- Ist Teil von
- Electronics letters, 2015-08, Vol.51 (17), p.1366-1368
- Ort / Verlag
- The Institution of Engineering and Technology
- Erscheinungsjahr
- 2015
- Quelle
- Wiley Online Library - AutoHoldings Journals
- Beschreibungen/Notizen
- A high current gain cutoff frequency (fT) of 90 GHz and a peak maximum oscillation frequency (fMAX) as high as 150 GHz are reported for a rectangular-shaped gate AlGaN/GaN high-electron mobility transistor (HEMT) on a high resistive silicon (HR-Si) substrate. The combined high fT/fMAX values for 100 nm unpassivated gate device demonstrate the high-quality heterostructure on silicon substrate. The reported high-performance RF device characteristics are comparable and even superior to the existing passivated AlGaN/GaN HEMTs of similar gate length. In addition, good DC characteristics have been recorded with the drain current density and an extrinsic transconductance of 0.6 A/mm and 157 mS/mm, respectively.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0013-5194, 1350-911XeISSN: 1350-911XDOI: 10.1049/el.2015.1395Titel-ID: cdi_iet_journals_10_1049_el_2015_1395
- Format
- –
- Schlagworte
- AlGaN‐GaN, aluminium compounds, current density, frequency 150 GHz, frequency 90 GHz, gallium compounds, high electron mobility transistors, high resistive silicon substrate, high‐electron mobility transistor, HR‐Si substrate, III‐V semiconductors, maximum oscillation frequency, microwave transistors, RF device, Semiconductor technology, size 100 nm, unpassivated rectangular gate HEMT, wide band gap semiconductors