Details

Autor(en) / Beteiligte

• Zhang, Yuan-Lan
• Liu, Peng-Fei
• Zhang, Jie
• Ma, Hong-Ping
• Liu, Jian-Hua
• Liu, Qi-Bin
• Chen, Zhong-Guo
• Zhang, Qingchun J.

Titel

1.2-kV 4H-SiC JBS Diodes Engaging P-Type Retrograde Implants

Ist Teil von

• IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.6963-6970

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2022

Quelle

IEEE Xplore

Beschreibungen/Notizen

• In this article, we propose the use of p-type retrograde implants (RPs) for enhanced device performance and alleviated temperature dependence of leakage current in 4H-SiC junction barrier Schottky (JBS) diodes. Two 1200-V JBS diodes consisting of optimized RP have been designed, fabricated, and characterized. The RP offers the following merits for JBS: 1) deeper p-n junction to reduce electric field at the Schottky interface; 2) more width of the space charge zone to decrease capacitance; 3) more depletion region in the p-type unit to partly undertake blocking voltage; and 4) higher doping of subsurface region to address the reach-through issue. The fabricated RP devices yielded a remarkable enhancement of an ultralow <inline-formula> <tex-math notation="LaTeX">{V}_{F} \cdot {Q}_{C} </tex-math></inline-formula> to be 144.5 <inline-formula> <tex-math notation="LaTeX">\text{V}\cdot </tex-math></inline-formula>nC (1.53 V <inline-formula> <tex-math notation="LaTeX">\times94.3 </tex-math></inline-formula> nC) at 20-A rated current, which might be the reported lowest one to the best of our knowledge. What is more, the RP-JBS diodes could realize a leakage current (<inline-formula> <tex-math notation="LaTeX">{I}_{R} </tex-math></inline-formula>) of 0.2 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula> at 1200 V and maintain an extremely low level of 6.0 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula> even at 175 °C, with just 5.8-<inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula> increasement over the temperature range of −50 °C to 175 °C. Compared with the latest commercial JBS products from leading companies, the RP-JBS diode has shown its significant capability of mitigating the impact of rising temperatures on device performance. In particular, only 8.4% roll-off of breakdown voltage (<inline-formula> <tex-math notation="LaTeX">{V}_{B} </tex-math></inline-formula>) extracted at 50 <inline-formula> <tex-math notation="LaTeX">\mu \text{A} </tex-math></inline-formula> was obtained. The superior performance of the 4H-SiC JBS diodes with RP makes the device a promising candidate for high-temperature, high-voltage, and high-frequency applications.