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Details

Autor(en) / Beteiligte
Titel
Reliable Sub-Nanosecond Switching in Magnetic Tunnel Junctions for MRAM Applications
Ist Teil von
  • IEEE transactions on electron devices, 2022-12, Vol.69 (12), p.7180-7183
Ort / Verlag
New York: IEEE
Erscheinungsjahr
2022
Quelle
IEEE Xplore
Beschreibungen/Notizen
  • We demonstrate reliable sub-nanosecond switching in two-terminal spin transfer torque magnetoresistive random access memory (STT-MRAM) devices by using double spin-magnetic tunnel junctions (DS-MTJs). A write-error-rate (WER) of <inline-formula> <tex-math notation="LaTeX">1{E} -6 </tex-math></inline-formula> was achieved in 194 devices with 250-ps write pulses and tight distributions. The WER = <inline-formula> <tex-math notation="LaTeX">1{E} -6 </tex-math></inline-formula> was also demonstrated over a temperature range of −40 °C-85 °C in a single device with 225-ps write pulses. No degradation was observed after <inline-formula> <tex-math notation="LaTeX">1{E}10 </tex-math></inline-formula> write cycles in selected single devices, written with 250-ps write pulses. We compare the DS-MTJ device switching performance with the published results from the state-of-the-art three-terminal spin-orbit torque (SOT) MRAM devices and show a <inline-formula> <tex-math notation="LaTeX">10\times </tex-math></inline-formula> reduction in switching current density (<inline-formula> <tex-math notation="LaTeX">{J}_{\text {c}} </tex-math></inline-formula>) and 3-<inline-formula> <tex-math notation="LaTeX">10\times </tex-math></inline-formula> reduction in power consumption for devices with similar energy barriers (<inline-formula> <tex-math notation="LaTeX">{E}_{\text {b}} </tex-math></inline-formula>).

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