Details

Autor(en) / Beteiligte

• Naah, Gideon
• Piacibello, Anna
• Camarchia, Vittorio
• Colantonio, Paolo
• Giofre, Rocco

Titel

Low-Bias-Complexity Ku-band GaN MMIC Doherty Power Amplifier

Ist Teil von

• 2022 IEEE/MTT-S International Microwave Symposium - IMS 2022, 2022, p.1041-1043

Ort / Verlag

IEEE

Erscheinungsjahr

2022

Quelle

IEEE Xplore

Beschreibungen/Notizen

• This paper present a two-stage Doherty power amplifier designed to maximize the efficiency at 6 dB back-off while minimizing the complexity in terms of bias voltages. The amplifier has been manufactured on a GaN-SiC 150 nm monolithic microwave integrated circuit technology. The fabricated chip, measured in continuous wave conditions, maintains a linear gain higher than 13 dB, a saturated output power in excess of 34 dBm, with a power-added efficiency higher than 20% both at saturation and at 6 dB output back-off, over the 14.5 GHz-17.25 GHz band, favorably comparing with the present state of the art for similar applications.