Details

Autor(en) / Beteiligte

• Wuchen Wu
• Changyong Fan
• Yajie Wang
• Yangang Wang
• Xueqing Cui
• Jacob, P.
• Held, M.

Titel

SEM investigation on IGBT latch-up failure

Ist Teil von

• 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), 2001, Vol.2, p.1040-1042 vol.2

Ort / Verlag

IEEE

Erscheinungsjahr

2001

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore

Beschreibungen/Notizen

• Latch-up failure is one of the most important failure phenomena of IGBT modules because of the p-n-p-n sandwich device structure. Half-bridge IGBT modules latch-up failure was observed by a switching test. The SEM technique was employed in the failure analysis work in order to investigate how the module was destroyed by latching-up. This paper reports the failure analysis results and the relevant analysis techniques used in the work.