Details

Autor(en) / Beteiligte

• Kinam Kim
• Joo-Sung Park

Titel

A 0.11 /spl mu/m DRAM technology for 4Gb DRAM and beyond

Ist Teil von

• 2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443), 2001, Vol.1, p.178-182 vol.1

Ort / Verlag

IEEE

Erscheinungsjahr

2001

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• A 1.8 V 650 mm/sup 2/ 4Gb DRAM fabricated with 0.10 /spl mu/m/sup 2/ cell size has been successfully developed using 0.11 /spl mu/m DRAM technology. Well-proven KrF lithography has been extended with various resolution enhancement techniques for 0.11 /spl mu/m DRAM technology. 80 nm array transistor and sub-80 nm memory cell contact, which are the smallest array transistor ever reported, are successfully developed for high functional yield as well as high chip performance. In addition, many novel DRAM technologies are developed and will have strong influence on the future DRAM integration. These are novel oxide gap-filling, W-bit line with stud contact for borderless metal contact, line-type storage node selfaligned contact (SAC), mechanically stable metal-insulator-silicon (MIS) capacitor and CVD Al process for metal interconnections.