Details

Autor(en) / Beteiligte

• Racanelli, M.
• Schuegraf, K.
• Kalburge, A.
• Kar-Roy, A.
• Shen, B.
• Hu, C.
• Chapek, D.
• Howard, D.
• Quon, D.
• Wang, F.
• U'ren, G.
• Lao, L.
• Tu, H.
• Zheng, J.
• Zhang, J.
• Bell, K.
• Yin, K.
• Joshi, P.
• Akhtar, S.
• Vo, S.
• Lee, T.
• Shi, W.
• Kempf, P.

Titel

Ultra high speed SiGe NPN for advanced BiCMOS technology

Ist Teil von

• International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224), 2001, p.15.3.1-15.3.4

Ort / Verlag

IEEE

Erscheinungsjahr

2001

Quelle

IEEE Xplore

Beschreibungen/Notizen

• A scalable SiGe NPN demonstrating Ft*BVceo product of 340 GHz-V with Ft of 170 GHz and BVceo of 2.0 V together with Fmax of 160 GHz is presented. Peak Ft is reached at a relatively low current density of 6 mA//spl mu/m/sup 2/. The device is integrated in a 0.18 /spl mu/m BiCMOS process with dual-gate MOS transistors, high voltage NPN transistors, MIM capacitors, metal resistors, and 6 layers of metal including two layers of thick Cu for improved interconnect and inductor performance.