Details

Autor(en) / Beteiligte

• Mansour, Islam
• Mansour, Marwa
• Aboualalaa, Mohamed
• Allam, Ahmed
• Abdel-Rahman, Adel B.
• Pokharel, Ramesh K.
• Abo-Zahhad, Mohammed

Titel

Dual-Band VCO Using High Quality Factor Two Orthogonally Located Inductors in 0.18-μm CMOS Technology

Ist Teil von

• IEEE microwave and wireless components letters, 2022-12, Vol.32 (12), p.1431-1434

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2022

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• This work introduces a new topology for designing low-phase noise (PN) dual-band voltage-controlled oscillator (VCO) by proposing orthogonally located inductors in 0.18-<inline-formula> <tex-math notation="LaTeX">\mu \text{m} </tex-math></inline-formula> CMOS. The inductors are implemented using five metal layers keeping the lowest layer empty to maximize the quality (<inline-formula> <tex-math notation="LaTeX">Q </tex-math></inline-formula>) factor. The first inductor is two halves shunted octagonal loops using the top layer (M6) and utilized in cross-coupled VCO, while the second inductor is formed by four C-shaped shunted inductors using the lower four layers <inline-formula> <tex-math notation="LaTeX">\text{M}_{\mathrm {5-2}} </tex-math></inline-formula> and used in current-reuse (CR) VCO. The M6 inductor improves the <inline-formula> <tex-math notation="LaTeX">Q </tex-math></inline-formula>-factor by more than 25%over one loop inductor in the frequency band of interest, while the <inline-formula> <tex-math notation="LaTeX">\text{M}_{\mathrm {5-2}} </tex-math></inline-formula> inductor uses four shunt layers to boost the <inline-formula> <tex-math notation="LaTeX">Q </tex-math></inline-formula>-factor by 28% in <inline-formula> <tex-math notation="LaTeX">K </tex-math></inline-formula>-band compared to the single-layer inductor. The VCO oscillates from 22.36 to 23.4 GHz with PN of −112.4 dBc/Hz at 1 MHz and figure of merit (FoM) of −188.8 dBc/Hz, while the CR VCO has tuning range from 23.8 to 25.7 GHz with a PN of −107 dBc/Hz at 1 MHz and FoM −185.8 dBc/Hz.