Details

Autor(en) / Beteiligte

• Torraca, P. La
• Caruso, F.
• Padovani, A.
• Tallarida, G.
• Spiga, S.
• Larcher, L.

Titel

Atomic Defects Profiling and Reliability of Amorphous Al2O3 Metal-Insulator-Metal Stacks

Ist Teil von

• IEEE transactions on electron devices, 2022-07, Vol.69 (7), p.3884-3891

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2022

Quelle

IEEE Xplore

Beschreibungen/Notizen

• We present a comprehensive characterization of amorphous alumina (a-Al 2 O 3 ) high-<inline-formula> <tex-math notation="LaTeX">{k} </tex-math></inline-formula> dielectric in metal-insulator-metal (MIM) stacks, self-consistently extracting the space-energy distribution of a-Al 2 O 3 atomic defects and the related bond-breaking process parameters. Active defects are profiled via simultaneous simulation of current-voltage (<inline-formula> <tex-math notation="LaTeX">{I} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">\textit {V} </tex-math></inline-formula>), capacitance-voltage ( CV ), conductance-voltage (GV) (i.e., defect spectroscopy), and low-field <inline-formula> <tex-math notation="LaTeX">{I} </tex-math></inline-formula>-<inline-formula> <tex-math notation="LaTeX">{V} </tex-math></inline-formula> hysteresis analysis. The defect energies extracted (<inline-formula> <tex-math notation="LaTeX">{E}_{TH}= 1.55 </tex-math></inline-formula> and 3.55 eV) are consistent with oxygen vacancies and aluminum interstitials. The voltage-dependent dielectric breakdown (VDDB) statistics of a-Al 2 O 3 is investigated using ramped voltage stress (RVS). The VDDB statistics show a complex and polarity-dependent breakdown statistics, correlating with defect distributions, which allows estimating the a-Al 2 O 3 bond-breaking parameters with the support of multiscale atomistic simulations of the breakdown process.