Details

Autor(en) / Beteiligte

• Li, Shan
• Yan, Zu-Yong
• Tang, Jin-Cheng
• Yue, Jian-Ying
• Liu, Zeng
• Li, Pei-Gang
• Guo, Yu-Feng
• Tang, Wei-Hua

Titel

Ga₂O₃/V₂O₅ Oxide Heterojunction Photovoltaic Photodetector With Superhigh Solar-Blind Spectral Discriminability

Ist Teil von

• IEEE transactions on electron devices, 2022-05, Vol.69 (5), p.2443-2448

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2022

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• Heterojunction photodetectors (PDs) with photovoltaic effect could play a crucial role in future energy-conservation photoelectronic devices for their self-powered work manner. Herein, a self-powered PD was successfully constructed on the all-oxide Ga 2 O 3 /V 2 O 5 thin-film heterojunction. With a type-I straddling band alignment, the Ga 2 O 3 /V 2 O 5 heterostructure demonstrated an obvious photovoltaic effect with an open-circuit voltage of 0.4 V. The large bandgap (5.01 eV) of <inline-formula> <tex-math notation="LaTeX">\beta </tex-math></inline-formula>-Ga 2 O 3 and the effective electron-hole pair separation within heterointerface produced a superhigh solar-blind spectral discriminability for the Ga 2 O 3 /V 2 O 5 heterojunction PD, with deep-ultraviolet (DUV)/visible rejection ratio (<inline-formula> <tex-math notation="LaTeX">{R}_{{240}}/{R}_{{400}} </tex-math></inline-formula>) of 6.0 <inline-formula> <tex-math notation="LaTeX">\times 10^{{4}} </tex-math></inline-formula>, photo-to-dark current ratio (PDCR) of <inline-formula> <tex-math notation="LaTeX">2.6 \times 10^{{7}} </tex-math></inline-formula>, on/off switching ratio of <inline-formula> <tex-math notation="LaTeX">1.87\times 10^{{5}} </tex-math></inline-formula>, and specific detectivity of 7.8 <inline-formula> <tex-math notation="LaTeX">\times 10^{{13}} </tex-math></inline-formula> Jones. The largest responsivities in self-powered mode (0 V) and power-supply mode (−5 V) were 19.8 and 79.2 mA/W, respectively. The excellent self-powered photodetection performance of Ga 2 O 3 /V 2 O 5 oxide heterojunction provides a new strategy for next-generation energy-conservation solar-blind PDs.