Details

Autor(en) / Beteiligte

• Park, Myeong-Jae
• Cho, Ho Sung
• Yun, Tae-Sik
• Byeon, Sangjin
• Koo, Young Jun
• Yoon, Sangsic
• Lee, Dong Uk
• Choi, Seokwoo
• Park, Jihwan
• Lee, Jinhyung
• Cho, Kyungjun
• Moon, Junil
• Yoon, Byung-Kuk
• Park, Young-Jun
• Oh, Sang-muk
• Lee, Chang Kwon
• Kim, Tae-Kyun
• Lee, Seong-Hee
• Kim, Hyun-Woo
• Ju, Yucheon
• Lim, Seung-Kyun
• Baek, Seung Geun
• Lee, Kyo Yun
• Lee, Sang Hun
• We, Woo Sung
• Kim, Seungchan
• Choi, Yongseok
• Lee, Seong-Hak
• Yang, Seung Min
• Lee, Gunho
• Kim, In-Keun
• Jeon, Younghyun
• Park, Jae-Hyung
• Yun, Jong Chan
• Park, Chanhee
• Kim, Sun-Yeol
• Kim, Sungjin
• Lee, Dong-Yeol
• Oh, Su-Hyun
• Hwang, Taejin
• Shin, Junghyun
• Lee, Yunho
• Kim, Hyunsik
• Lee, Jaeseung
• Hur, Youngdo
• Lee, Sangkwon
• Jang, Jieun
• Chun, Junhyun
• Cho, Joohwan

Titel

A 192-Gb 12-High 896-GB/s HBM3 DRAM with a TSV Auto-Calibration Scheme and Machine-Learning-Based Layout Optimization

Ist Teil von

• 2022 IEEE International Solid- State Circuits Conference (ISSCC), 2022, Vol.65, p.444-446

Ort / Verlag

IEEE

Erscheinungsjahr

2022

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• Ever since the introduction of high bandwidth memory (HBM DRAM) and its succeeding line-ups, HBM DRAM has been heralded as a prominent solution to tackle the memory wall problem. However, despite continual memory advancements the advent of high-end systems, including supercomputers, hyper-scale data centers and machine learning accelerators, are expediting requirements for higher-performance memory solutions. To accommodate the increasing system-level demands, we introduce HBM3 DRAM, which employs multiple new features and design schemes. Techniques such as an on-die ECC engine, internal NN-DFE I/O signaling, TSV auto-calibration, and layout optimization based on machine-learning algorithms are implemented to efficiently control timing skew margins and SI degradation trade-offs. Furthermore, reduced voltage swings allow for improved memory bandwidth, density, power efficiency and reliability.