Details

Autor(en) / Beteiligte

• Carpenter, R.
• Kim, W.
• Sankaran, K.
• Ao, N.
• Ben Chroud, M.
• Kumar, A.
• Trovato, A.
• Pourtois, G.
• Couet, S.
• Kar, G. S.

Titel

Demonstration of a Free-layer Developed With Atomistic Simulations Enabling BEOL Compatible VCMA-MRAM with a Coefficient ≥100fJ/Vm

Ist Teil von

• 2021 IEEE International Electron Devices Meeting (IEDM), 2021, p.17.6.1-17.6.4

Ort / Verlag

IEEE

Erscheinungsjahr

2021

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• For the first time in voltage control of magnetic anisotropy magnetic random-access memory (VCMA-MRAM), a large coefficient of ≥ 100 fJ/Vm has been demonstrated in fully integrated, BEOL compatible, magnetic tunnel junctions (MTJ). This was achieved while maintaining a high TMR (180%) and thermal stability factor ( \Delta > 40 ). VCMA-induced switching is also explored, showing the benefits for low power and ultrafast memory applications. This was enabled thanks to the development of a VCMA-MRAM specific free-layer (FL) which incorporates the insertion of transition metals at the CoFeB|MgO interface. The design of this FL was driven by atomistic simulations using an imec developed, non-perfect epitaxial stack model.