Details

Autor(en) / Beteiligte

• Zhang, Hao
• Meng, Runquan
• Zhang, Dingbang
• Ding, Yingying
• Wu, Ziniu

Titel

Modeling and Suppression of Crosstalk of SiC MOSFET in Bidirectional Buck/Boost Converter

Ist Teil von

• 2021 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia (WiPDA Asia), 2021, p.11-16

Ort / Verlag

IEEE

Erscheinungsjahr

2021

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• Due to the influence of parasitic parameters, there will be crosstalk when SiC MOSFET is used in bidirectional Buck/Boost converter, which affects the safe and reliable operation of the converter. Aiming at the crosstalk voltage of bidirectional Buck/Boost converter in operation, a simulation model with parasitic parameters is established under LTspice, and then the corresponding experimental test device is built to verify the correctness of the model. Finally, the influence of parasitic inductance parameters on crosstalk voltage is explored in LTspice model, and how to optimize the device and wiring layout to suppress crosstalk in bidirectional Buck/Boost converter is analyzed.